A Development of super radiation-hardened power electronics using silicon carbide semiconductors; Toward MGy-class radiation resistivity

Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11

Study of high efficiency excited helium atom beam production for electric field measurements with high spatial and temporal resolution by laser-induced fluorescence method, JAERI's nuclear research promotion program, H13-013 (Contract research)

Yoshikawa, Kiyoshi*; Takiyama, Ken*; Onishi, Masami*; Yamamoto, Yasushi*; Nagasaki, Kazunobu*; Masuda, Kai*; Toku, Hisayuki*; Horiike, Hiroshi*

JAERI-Tech 2005-006, 116 Pages, 2005/03

JAERI-Tech-2005-006.pdf:24.79MB

no abstracts in English

The Electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide

Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro

Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06

https://doi.org/10.1143/JJAP.42.L625

The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm/Vs. The leakage current of gate oxide was of a few tens of nA/cm at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.

Development for superconducting cavities at JAERI

Ouchi, Nobuo; JAERI-KEK Superconduction Proton Linac Development Team

KEK Proceedings 2000-23, p.39 - 43, 2001/02

no abstracts in English

Effect of field ionization on interaction of an intense subpicosecond laser pulse with foils

Zhidkov, A. G.; Sasaki, Akira

Physics of Plasmas, 7(5), p.1341 - 1344, 2000/05

https://doi.org/10.1063/1.873775

no abstracts in English

Direct measurement of electromagnetic field pattern of fast wave in FWCD experiments using ponderomotive potential produced by beat wave in JFT-2M

Saigusa, Mikio*; Kanazawa, Sadayoshi; Ogawa, Toshihide; Ido, Takeshi*; Kawashima, Hisato; Kikuchi, Kazuo; Fukuyama, Atsushi*; Kamiya, Kensaku; JFT-2M Team

Proceedings of 2000 International Congress on Plasma Physics (ICPP 2000), Vol.3, p.844 - 847, 2000/00

no abstracts in English

Development of accelerating unit for high beam current

; Toyama, Shinichi; Nomura, Masahiro; Hirano, Koichiro; Yamazaki, Yoshio; Sato, Isamu

JNC TN9400 99-073, 18 Pages, 1999/08

JNC-TN9400-99-073.pdf:0.57MB

A short traveling wave accelerator with a traveling wave resonant ring is proposed for high beam current accelerators (including the linear accelerator, circular accelerator and storage ring). It is a normal conducting accelerator. The CW beam current can be as high as 10A. Such kind of accelerator unit has large beam holes for damping all of the cavity high order modes in order to avoid the resonant buildup of the fields that would cause multibunch instabilities at high currents. It has high efficiency, high power input capability and low K. It is called "single mode" type. Even though beams are accelerated off the crest for phase stability in circular accelerator, the cavities do not need detuning.

Acceleration experiment of hydrogen negative ion beams up to 1MeV using multi-aperture multi-stage electrostatic accelerator

Fujiwara, Yukio; Hanada, Masaya; Kashiwagi, Mieko; Kitagawa, Tadashi*; Miyamoto, Kenji; Morishita, Takatoshi; Okumura, Yoshikazu; Takayanagi, Tomohiro; Taniguchi, Masaki; Watanabe, Kazuhiro

Dai-10-Kai Ryushisen No Sentanteki Oyo Gijutsu Ni Kansuru Shimpojiumu Hobunshu, p.87 - 92, 1999/00

no abstracts in English

Electron temperature, density and pressure gradients at the edge on H-mode JFT-2M plasma

Yamauchi, Toshihiko; *; *;

Physics Letters A, 247(4-5), p.330 - 338, 1998/00

https://doi.org/10.1016/S0375-9601(98)00635-5

no abstracts in English

Cold-electron production for optical-field ionization X-ray lasers using mixed gases

Nagashima, Keisuke; Matoba, Toru; *

Physical Review A, 56(6), p.5183 - 5186, 1997/12

https://doi.org/10.1103/PhysRevA.56.5183

no abstracts in English